1.
J. S. Harris, Jr.,
"GaAs Technology: Past,
Present and Future," Stanford Annual Conference on Process and Device
Modeling, Stanford University,
August 1984. (Invited)
2.
J. S. Harris, Jr. and
T. Heirl, "Three-Inch Non-Indium Bonded Technology for MBE Growth," Selectively
Doped Heterostructure Transistor Conference, Santa Barbara, CA, December 1984.
1985
3.
K. Yoh and
J. S. Harris, Jr., "Effects of Temperature on Threshold Voltage in
MODFETs," WOCSEMMAD 1985, Ft. Lauderdale, Florida, February 1985.
4.
S. Hellman
and J. S. Harris, Jr., "The Dispersion Relation for Energetic Polarons
Confined to One Dimension," American Physical Society Meeting, Baltimore, Maryland, March 1985.
5.
J. S.
Harris, Jr., "Molecular Beam Epitaxy," Stanford Annual Conference
on Process and Device Modeling, Stanford University, August 1985. (Invited)
1986
6.
D. Liu, Y.
C. Pao, P. Pitner and J. S. Harris, Jr., "Role of In-Bonding and Hydrogen
Background on Deep Level Traps in MBE GaAs," WOCSEMMAD 1986, San Francisco, CA, February 1986.
7.
J. S.
Harris, Jr., H. H. Lin and P. M. Pitner, "Emitter-Base Junction Surface
Leakage and its Impact for Scaled Heterojunction Bipolar Transistors," WOCSEMMAD
1986, San Francisco, CA,
February 1986.
8.
Y. C. Pao,
D. Liu, W. S. Lee and J. S. Harris, Jr., "Effect of Hydrogen on Undoped
and Lightly Si Doped GaAs Grown by Molecular Beam Epitaxy," WOCSEMMAD
1986, San Francisco, CA,
February 1986.
9.
E. S.
Hellman and J. S. Harris, Jr., "Slow Polarons Below the Phonon Emission
Threshold in High Magnetic Fields or in One Dimensional Semiconductor
Heterostructures," American Physical Society, Las Vegas, April 1986.
10.
S. M. Koch,
S. J. Rosner, D. Schlom and J. S. Harris, Jr., "The Growth of GaAs on Si
by Molecular Beam Epitaxy," Materials Research Society Meeting, Palo Alto, CA, April 1986.
11.
S. J.
Rosner, S. M. Koch, S. Laderman and J. S. Harris, Jr., "Microstructure of
Thin Layers of MBE-Grown GaAs on Si Substrates," Materials Research
Society Meeting, Palo
Alto, CA, April 1986.
12.
D. Liu, W.
S. Lee and J. S. Harris, Jr., "Hydrogen Background Pressure Effects on the
Deep Traps in MBE Grown-N-Type GaAs," Materials Research Society
Meeting, Palo Alto, CA,
April 1986.
13.
J. S.
Harris, Jr., "GaAs on Si, The Best of Each or Worst of Both?" Santa
Clara IEEE Section,
November 1986. (Invited).
14.
K. Yoh and
J. S. Harris, "New Materials and Structures for Improved Complementary
MODFETs," HEMT Workshop, Kona, Hawaii, December 1986.
15.
Y. C. Pao,
J. S. Harris, C. Nishimoto, R. Norton, S. Bandy, H. Cooke, J. Archer,
"Gate Recess Induced Parasitic Effects on AlGaAs/GaAs MODFETs," HEMT
Workshop, Kona, Hawaii,
December 1986.
1987
16.
K. Yoh and
J. S. Harris, Jr., "Complementary MODFET Circuit using Selective Molecular
Beam Epitaxy," WOCSEMMAD 1987, Hilton Head, South Carolina, March 1987.
17.
Y. C. Pao,
H. Cooke, J. S. Harris, Jr., "Gate Recess Induced Parasitic Effect in
Al/GaAs MODFET," WOCSEMMAD 1987, Hilton Head, South Carolina, March 1987.
18.
Y. C. Pao,
J. S. Harris, Jr., L. Parechanian and E. R. Weber, "Material and Device
Characterization of (110) GaAs/AlGaAs Grown by MBE," WOCSEMMAD 1987, Hilton Head, South Carolina, March
1987.
19.
K. Yoh, J.
S. Harris, "A p-channel Strained Quantum Well Modulation-doped FET", Japan
Society of Applied Physics Meeting, Tokyo, March 1987.
20.
S. Y. Chou,
J. S. Harris, Jr., R. F. W. Pease, D. Allee, P. de la Houssaye, M. McCord, D.
Narum and D. Schlom, "Sub-100nm Fabrication Technology and Devices by
Combining Electron Beam Lithography and Molecular Beam Epitaxy"
American Physical Society Meeting, New York, March 1987. (Invited).
21.
J. S.
Harris, Jr., S. M. Koch and S. J. Rosner, "The Nucleation and Growth of
GaAs on Si", Materials Research Society Meeting, Anaheim, CA, April 1987. (Invited).
22.
S. J.
Rosner, S. M. Koch and J. S. Harris, Jr., "Structural Characterization of
Thin, Low Temperature Films of GaAs on Si Substrates", Materials
Research Society Meeting,
Anaheim, CA, April 1987.
23.
K. Nauka,
G. A. Reid, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Deep Electron
Traps in MBE GaAs on Si", Materials Research Society Meeting, Anaheim, CA April 1987.
24.
D. R.
Allee, P. R. de la Houssaye, D. G. Schlom, J. S. Harris, Jr., and R. F. W.
Pease, "Sub-100nm Gate Length GaAs MESFETs and MODFETs Fabricated by a
Combination of MBE and Electron Beam Lithography," 31st International
Symposium on Electron, Ion and Photon Beams, Woodland Hills, CA, May 1987.
25.
S. M. Koch,
S. J. Rosner, R. Hull, and J. S. Harris, Jr., "The Initial Stages of
GaAs/Si Growth by MBE", Electronic
Materials Conference, Santa
Barbara, CA, June 1987.
26.
J. W.
Adkisson, T. I. Kamins, S. M. Koch, J. S. Harris, S. J. Rosner,
27.
G. A. Reid,
"Processing and Characterization of Confined Area GaAs on Silicon," GaAs/Si
Workshop, Marina Del
Rey, CA, June 1987.
28.
G. W.
Yoffe, D. G. Schlom and J. S. Harris, Jr., "MBE Growth of Tunable
Multi-Layer Interference Optical Modulators," Device Research
Conference, Santa
Barbara, CA, June 1987.
29.
Y. C. Pao,
J. S. Harris, Jr., L. Parechanian and E. R. Weber, "Material and Device
Characterization of (110) GaAs/AlGaAs Grown by MBE," Electronics
Material Conference,
Santa Barbara, CA, June 1987.
30.
S. M. Koch,
S. J. Rosner, R. Hull, and J. S. Harris, Jr., "The Initial Stages of
GaAs/Si Growth by MBE", GaAs/Si Workshop, Marina del Rey, CA, June 1987.
31.
S. Y. Chou,
E. Wolak, J. S. Harris, Jr. and R. F. W. Pease, "A Lateral Resonant
Tunneling FET," 3rd International Conference on Superlattices,
Microstructures, and Microdevices, Chicago, August 1987.
32.
S. Y. Chou,
E. Wolak, J. S. Harris, Jr. and R. F. W. Pease, "Resonant Tunneling of
Electrons of 1 or 2-Degrees of Freedom," 3rd International Conference
on Superlattices, Microstructures, and Microdevices, Chicago, August 1987.
33.
J. S.
Johannessen, J. S. Harris, "The Influence of Substrates on Implanted Layer
Characteristics", 14th International Symposium on GaAs and Related
Compounds, Crete,
Greece. September 1987.
34.
E. S.
Hellman, D. G. Schlom, N. Missert, K. Char, J. S. Harris, Jr., M. R. Beasley,
A. Kapitulnik, T. H. Geballe, J. N. Eckstein, S. L. Weng and C. Webb,
"Molecular Beam Epitaxy and Deposition of High Tc Superconductors," 8th
MBE Workshop, Los
Angeles, CA, September 1987.
35.
J. Lin, E.
C. Larkins, Y. C. Pao, D. Liu, G. W. Yoffe, T. K. Ma and J. S. Harris, Jr.,
"An Electrical, Optical and Morphological Study of n-AlGaAs (x=0.24) Grown
by MBE," 8th MBE Workshop, Los Angeles, CA, September 1987.
36.
J. S.
Harris, "Nucleation and Growth of GaAs on Si," AIME TMS Meeting, Cincinnati, October 1987. (Invited)
37.
R. Hull, J.
C. Bean, R. Leibenguth, S. M. Koch and J. S. Harris, Jr., "Relationship
Between Substrate Cleaning, Surface Structure and Nucleation Phenomena in
Heteroepitaxial Growth on Si", Electrochemical Society Meeting, Honolulu, Hawaii, Dec, 1987. (Invited)
38.
K. Yoh and
J. S. Harris, Jr., "Complementary MODFET Circuits Consisting of
Pseudomorphic N-MODFET and Double Heterojunction P-MODFET", By Selective
Molecular Beam Epitaxy, International Electron Device Meeting, Washington, DC, p. 892, December 1987.
39.
S. J. B.
Yoo, M. M. Fejer, Alex Harwit, R. L. Byer, J. S. Harris, Jr., " Second
Harmonic Generation in dc-biased quantum wells", Annual Meeting,
Optical Society of America,
1987.
1988
40.
R. Hull, J.
C. Bean, S. M. Koch and J. S. Harris, Jr., "Heteronucleation and Growth on
Si Surfaces by Molecular", TMS/AIMF Symposium, Phoenix, Arizona, Jan 1988. (Invited)
41.
Y. C. Pao,
D. Liu and J. S. Harris, Jr., "Hydrogen in MBE Grown AlGaAs/GaAs," WOCSEMMAD
1988, Monterey, CA,
February, 1988.
42.
P. R. de la
Houssaye, D. Allee, Y. C. Pao, D. G. Schlom, R. F. W. Pease and J. S. Harris,
Jr., "Electron Saturation Velocity Variation in InGaAs and GaAs
MODFETs," WOCSEMMAD 1988, Monterey, CA, February 1988.
43.
J. S.
Harris, "Integrated Circuits Applications of Resonant Tunneling
Structures," American Physical Society Meeting, New Orleans, LA, March 1988. (Invited)
44.
J. N.
Eckstein, S. L. Weng, C. Webb, F. Turner, D. G. Schlom, E. S. Hellman, N.
Missert, J. S. Harris, Jr., and M. R. Beasley, "In-Situ RHEED
Characterization and Molecular Beam Epitaxy of DyBa2Cu307-x", American
Physical Society Meeting,
New Orleans, LA, March 1988.
45.
E. Wolak,
K. Lear, P. Pitner, E. S. Hellman, B. G. Park, J. S. Harris, Jr., and D. Thomas, "Elastic Scattering
Centers in Resonant Tunneling Diodes," American Physical Society Meeting,
New Orleans, LA, March 1988.
46.
E. Wolak,
K. Lear, P. Pitner, E. S. Hellman, B. G. Park, J. S. Harris, Jr., and D.
Thomas, "Elastic Scattering Centers in Resonant Tunneling
Diodes," SPIE Conference,
Newport Beach, CA, March, 1988.
47.
E. S.
Hellman, K. Lear and J. S. Harris, Jr., "Limit Cycle Oscillations in
Negative Differential Resistance Devices," American Physical Society
Meeting, New Orleans,
Louisiana, March, 1988.
48.
J. W.
Adkisson, T. I. Kamins, S. M. Koch, J. S. Harris, Jr., S. J. Rosner, K. Nauka
and G. A. Reid, "Growth of GaAs on Si in Masked, Etched Trenches", Materials
Research Society Meeting,
Reno, NV, April, 1988.
49.
D. G.
Schlom, J. N. Eckstein, E. S. Hellman, C. Webb, F. Turner, J. S. Harris, Jr.,
M. R. Beasley and T. H. Geballe, "Molecular Beam Epitaxy of Layered
DY-BA-CU-O Compounds," Materials Research Society Meeting Reno, NV, April 1988.
50.
J. S.
Harris, "GaAs on Si, The Best of Each or Worst of Both!", Frontiers
in Materials Science Seminar Series, State University of New York, April 1988. (Invited)
51.
E. Wolak,
K. Shepard, S. Y. Chou and J. S. Harris, Jr., "Elastic Scattering in
Resonant Tunneling Devices With One Degree of Freedom," 4th
International Conference on Superlattices, Microstructures and Microdevices, Triest, Italy , 1988.
52.
D. Liu, T.
Zhang, E. C. Larkins, T. T. Chiang, R. A. LaRue, J. S. Harris, Jr., T. Sigmon
and W. E. Spicer, "Sodium Sulfide Treated (100) and Misoriented (110) GaAs
Surfaces," 1988 International Symposium on Gallium Arsenide and Related
Compounds, Atlanta,
GA September 1988.
53.
E. C.
Larkins, D. Liu, Y. C. Pao, M. J. Lin, G. W. Yoffe and J. S. Harris, Jr.,
"Characterization of AlGaAs and GaAs Material and Interfaces Grown on
(110) GaAs by MBE,"15th International Symposium on Gallium Arsenide and
Related Compounds,
Atlanta, GA, September 1988.
54.
B. Lee, M.
H. Kim, S. S. Bose, G. E. Stillman, E. C. Larkins, E. S. Hellman, D. G. Schlom
and J. S. Harris, Jr., "Sulfur Incorporation in Undoped High Purity n-Type
GaAs Grown by Molecular Beam Epitaxy,"15th International Symposium on
Gallium Arsenide and Related Compounds,Atlanta, GA, September 1988.
55.
R.
Köhrbrück, S. Munnix, D. Bimberg, E. C. Larkins and J. S. Harris, Jr.,
"Flux Ratio Dependence of Growth Rate, Interface Quality, and Impurity
Incorporation in MBE Grown AlGaAs/GaAs Quantum Wells," 15th International
Symposium on Gallium Arsenide and Related Compounds, Atlanta, GA, September 1988.
56.
K. L. Lear,
K. Yoh and J. S. Harris, Jr., "Monolithic Integration of GaAs/AlAs
Resonant Tunnel Diode Load and GaAs Enhancement-Mode MESFET Drivers for Tunnel
Diode FET Logic Gates,"15th International Symposium on Gallium Arsenide
and Related Compounds,
Atlanta, GA, September 1988.
57.
J. S.
Harris, Jr., "MBE Growth of High Temperature Superconductors," 6th International MBE Conference, Sapporo, Japan, September 1988. (Invited)
58.
Y. C. Pao,
J. Franklin and J. S. Harris, Jr., "Influence of As4/Ga Flux
Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam
Epitaxy," 6th International MBE Conference, Sapporo, Japan, September 1988.
59.
Y. C. Pao,
D. Liu and J. S. Harris, Jr., "Molecular Beam Epitaxy AlGaAs/GaAs Grown in
the Presence of Hydrogen," 6th International MBE Conference, Sapporo, Japan, September 1988.
60.
J. S.
Harris, Jr., "MBE Growth of High Tc Superconductors: Problems and Future Prospects," Superconductors
in Electronics Commercialization Workshop, San Francisco, CA, September 1988. (Invited)
61.
D. G.
Schlom, W. S. Lee, T. Ma and J. S. Harris, Jr., "Reduction of
Gallium-Related Oval Defects," 9th MBE Workshop, Purdue University, West Lafayette, IN,
September 1988.
62.
S. Y. Chou,
D. R. Allee, R. F. W. Pease and J. S. Harris, "Lateral Resonant Tunneling
FETs" Engineering Foundation Conference on Ultra-High Speed Devices, Kona, Hawaii, December 1988.
1989
63.
J. S.
Harris, "Optoelectronics at Stanford", University of Florida,
Gainsville, Fl, February 1989.(Invited)
64.
S. K.
Diamond, E. Ozbay, M. J. W. Rodwell, D. M. Bloom, Y. C. Pao and J. S. Harris,
" Resonant Tunneling Diodes for Switching applications", Picosecond
Electronics and Optoelectronics Conference, Salt Lake City, UT, March 1989.
65.
G. N. Nasserbakht, J. W. Adkisson, T. I.
Kamins, B. A. Wooley, and J. S. Harris, Jr., "A Monolithically Integrated
Fiber-Optic Front-End Receiver in GaAs on Si Technology" Symposium VLSI
Circuits, Maui, HI, May
1989.
66.
J. M. Owens
and D. J. Halchin (Santa Clara University) and K. L. Lear, W. S. Lee, and J. S. Harris Jr.,
"Microwave Characteristics of MBE Grown Resonant Tunneling Devices" 1989
IEEE/MTT-S International Microwave Symposium, Long Beach, CA, June 1989.
67.
K. L. Lear,
W. S. Lee, and J. S. Harris, Jr., " Experimental Dependence of Resonant
Tunnel Diode Current on Accumulation Layer Band Profiles", 47th Annual
Device Research Conference,
MIT, Cambridge, MA, June 1989.
68.
S. Y. Chou,
D. R. Allee, R. F. W. Pease and J. S. Harris, Jr., "Quantum interference
Devices Fabricated Using Molecular Beam Epitaxy and Ultra-High Resolution
Electron Beam Lithography," 47th Annual Device Research Conference, MIT Cambridge, MA June 1989.
69.
S. Y. Chou,
D. R. Allee, R. F. Pease and J. S. Harris Jr., "New Lateral Resonant
Tunneling FETs Fabricated Using Molecular Beam Epitaxy and Ultra-High
Resolution Electron Beam Lithography", 16th International Symposium on
GaAs and Related Compounds,
Karuizawa, Japan, September, 1989.
70.
J. S.
Harris, "MBE Technology and High Speed Electronics", AGARD
Workshop, Trondheim,
Norway, September, 1989. (Invited)
71.
J. S.
Harris, "Growth of High Tc Superconductors by MBE", AGARD
Workshop, Trondheim,
Norway, September 1989. (Invited)