This course is an abbreviated version of EE216 to be offered in the summer only. This course cannot be counted towards depth or breadth, but can be counted as other EE units. Advanced undergraduate/graduate-level course introducing the fundamentals of carrier recombination-generation and transport in semiconductors. The physical principles of the operation of the p-n junctions, metal-semiconductor contact, bipolar junction, MOS capacitor, MOSFETS. Brief overview of photonic devices such as LEDs, Lasers, Photodiodes, Solar Cells. Summer, 2 units.
Basic Semiconductor Device Physics
- Introduction to semiconductors
- Energy Bands
- Fermi-Dirac and Boltzmann statistics, Fermi level
- Donors and Acceptors
- Free carrier concentrations
Carrier Transport
- Drift, mobility, diffusion, diffusivity
- Transport equations
P-N Junctions
- Energy Band diagrams
- Charge, electric field and potential profiles
- I-V characteristics
- C-V characteristics
Schottky Barrier & Metal Semiconductor Contacts
- Energy Band diagrams
- I-V characteristics
- Ohmic contacts
- Schottky diodes
MOS Capacitors
- Energy Band diagrams
- C-V characteristics
Field Effect Transistors (MOSFETs)
- Energy Band diagrams, principles of operation
- I-V characteristics
- Non-ideal behavior and short channel effects
Bipolar Junction Transistors
- Energy Band diagrams, principles of operation
Photonic devices
- LED, Photodiode, Solar Cell, Laser
EE216 topics not to be covered
- JFETS, MESFETS
- Advance Device Engineering Techniques e.g. strain engineering
- SRH recombination, Surface recombination
- Brief overview of Photonic Devices
- Circuit models for devices
- Brief discussion of BJTs