||T. H. Wood, C. A. Burrus, D. A. B. Miller,
D. S. Chemla, T. C. Damen, A. C. Gossard and W. Wiegmann, "Enhanced
Electro-Absorption in GaAs/GaAlAs Multiple Quantum Wells and its Application to
Opto-Electronic Devices," Inst. Phys. Conf. Ser. No. 74; Chapter 9 Proceedings
of the International Symposium on GaAs and Related Compounds, Biarritz, 1984, 687-688.
enhanced electroabsorption effect has been observed in multiple quantum wells (MQW) of
GaAs/GaAlAs. Recent calculations indicate that the effect arises from a large change in
the confinement energies of the electrons and holes in the wells with the application of
an electric field perpendicular to the layers. Excellent fits to the measured energy
shifts can be achieved with no adjustable parameters. This effect is used to make an
optical modulator that has low insertion loss and high speed. Optical pulses 131 ps long
have been generated from 121 ps electrical pulses.