||U. Koren, B. I. Miller, R. S. Tucker, G. Eisenstein, I.
Bar-Joseph, D. A. B. Miller, and D. S. Chemla, "High-Frequency
InGaAs/InP Multiple-Quantum-Well Buried-Mesa Electroabsorption Optical Modulator,"
Electronics Letters 23, 621-622, (1987).
The authors describe the
structure and performance characteristics of an InGaAs/InP multiple-quantum-well (MQW)
electroabsorption buried-mesa optical modulator. The device is fabricated with two
metal-organic chemical-vapour-deposition (MOCVD) growth steps, wherein small-area circular
(40 mu m diameter) PIN diodes are buried with Fe-doped semi-insulating (SI) InP regrowth.
The modulator has a relatively low insertion loss (4.5 dB) with 25% modulation depth and
very high modulation bandwith (5.3 GHz) operating at 1.62 mu m wavelength
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