338. A. K. Okyay, A. J. Pethe, D. Kuzum, S.
Latif, D. A. Miller, and K. C. Saraswat, "SiGe optoelectronic
metal-oxide semiconductor field-effect transistor," Opt. Lett. 32,
We propose a novel semiconductor
optoelectronic switch that is a fusion of a Ge optical detector and a Si
metal-oxide semiconductor field-effect transistor (MOSFET). The device
operation is investigated with simulations and experiments. The switch
can be fabricated at the nanoscale with extremely low capacitance. This
device operates in telecommunication standard wavelengths, hence
providing the surrounding Si circuitry with noise immunity from
signaling. The Ge gate absorbs light, and the gate photocurrent is
amplified at the drain terminal. Experimental current gain of up to
1000× is demonstrated. The device exhibits increased responsivity (∼3.5×)
and lower off-state current (∼4×)
compared with traditional detector schemes.