351. A. K. Okyay, A. J. Pethe, D. Kuzum, S.
Latif, D. A. B. Miller, and K. C. Saraswat, "Novel Si-based CMOS
Optoelectronic Switching Device Operating in the Near Infrared," in
Optical Fiber Communication Conference and Exposition and The National
Fiber Optic Engineers Conference on CD-ROM (Optical Society of America,
Washington, DC, 2007), Paper JWA38
A novel, high performance optoelectronic switch is introduced. The device
is a Si-MOSFET with Ge gate that can be fabricated at the nanoscale with
very low capacitance. Current gain of up to
1000× is demonstrated.
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