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D. A. B. Miller, C. T. Seaton, M. E. Prise
and S. D. Smith, "Bandgap Resonant Nonlinear Refraction in III-V
Semiconductors," Phys. Rev. Lett. 47, 197-200 (1981). Presents
experimental measurements of the resonance of the large intensity dependence of refractive
index in InSb near the band-gap energy at 77K and derive a semiempirical theory for this
effect which fits the measurements well, both in absolute magnitude and wavelength
dependence, using only measurable parameters. The size of the effect in other
nondegenerate direct-band-gap III-V compound semiconductors and at other temperatures is
predicted
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