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A. L. Lentine, L. M. F. Chirovsky, L. A. D'Asaro, C. W. Tu,
and D. A. B. Miller, "Energy scaling and subnanosecond switching of
symmetric self-electrooptic effect devices," IEEE Photonics Tech. Lett., 1,
129-131, (1989). The authors report the scaling of switching energy with device
area for four sizes of symmetric self-electrooptic effect devices, the smallest of which
has a switching energy of 3.6 pJ. Switching speeds of approximately 2 ns at 15 V bias and
approximately 860 ps at 22 V bias were attained by using mode-locked (6 ps) pulses,
although the energies in these pulses were somewhat higher, because of saturation of the
quantum-well material. Making the device area only moderately larger than the spot size is
suggested as a method of avoiding this saturation
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