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D. S. Chemla, S. Schmitt-Rink, W. H. Knox,
D. A. B. Miller, K. W. Goossen, and G. Hasnain "Ultrafast Nonlinear
Optical Effects in Biased Semiconductor Quantum Wells" phys. stat. sol. (b) 159,
11 (1990). The development of electronic and photonic devices operating in the
many-THz regime will require the invention of novel structure concepts and will implement
physical processes different from those presently used in optoelectronics. An analysis is
reviewed of the physical mechanisms that can be implemented to generate, propagate and
detect femtosecond electrical signals in properly designed semiconductor quantum well
structures. Also discussed are recent experimental investigations of these effects as well
as the fundamental limitations caused by two photon absorption |