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L. Y.
Nathawad, R. Urata, B. A. Wooley, and D. A. B. Miller, "A 20 GHz
bandwidth, 4 b photoconductive-sampling time-interleaved CMOS ADC,"
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.
2003 IEEE International , 2003 Pages 320 - 496 vol.1
GaAs photoconductive switches are integrated with two parallel 4 b CMOS
ADC channels for time-interleaved sampling of wideband signals. Peak
SNDR exceeding 23 dB has been measured for inputs up to 20 GHz. Each
channel dissipates 70 mW and occupies an area of 150 µm x 450 µm in a
0.25 µm CMOS technology.
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