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Publication # 326 |
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Y.-H. Kuo,
Y. Lee, S. Ren, Y. Ge, D. A. B. Miller, and J. S. Harris, "Quantum-confined
Stark effect electroabsorption in Ge/SiGe quantum wells on silicon
substrates," 18th Annual Meeting of the IEEE
Lasers and Electro-Optics Society, LEOS 2005, 23 – 27 October, 2005,
Sydney, Australia, Paper TuM4 We observe strong electroabsorption in Ge quantum wells with SiGe barriers, grown on Si substrates, with performance comparable to III-V materials, and promising compact, low-power, high-speed modulators compatible with Si CMOS electronics.
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