Curriculum Vitae

James S. Harris

James and Ellenor Chesebrough Professor of

Electrical Engineering, Applied Physics and Materials Science

 

Address:

James S. Harris

Department of Electrical Engineering

Center for Integrated Systems 328

Stanford, CA  94305-4075

Professor of Electrical Engineering, Applied Physics and Materials Science

Voice:      (650) 723-9775

Fax:         (650) 723-4659

E-mail:     Harris@Snow.Stanford.edu

Prof. Harris's Home Page:  http://www-ee.stanford.edu/~harris

Harris Research Group Home Page:  http://snow.stanford.edu/

Degrees:

Ph.D.      Stanford University, 1969

M.S.       Stanford University, 1965

B.S.        Stanford University, 1964 (with Great Distinction and Phi Beta Kappa))

Academic Experience:

1982-present - James and Ellenor Chesebrough Professor of Electrical Engineering and by courtesy, Applied Physics and Materials Science, Stanford University - Research on molecular beam epitaxy, nanofabrication technologies, micromachining, high speed electronic devices, optoelectronic devices, quantum transport and quantum computation.  Built up laboratory with five MBE systems, complete III-V processing and high-speed electronics and optoelectronics testing laboratory with 30 Ph.D. students, post docs and visitors.

1984-1998 Director, Solid State Laboratory, Stanford University - Responsible for management, appointments and promotions in Solid State Electronics Laboratory with eight faculty members and ~100 students.

1985-1999 Director, Joint Services Electronics Program - Responsible for coordinating electronics program with 12 faculty and 12-15 graduate students and post docs which is jointly sponsored by Army, Navy and Air Force.

1992-present Principal Investigator Stanford US-Asia Technology Management Center - Responsible for management and appointments for Center program with 4 staff and 8 students studying Asian technology management issues.


Industrial Experience:

1980-1982    Director Optoelectronics Research, Rockwell International - Responsible for direction and management of a technical department of 50 people in areas including:  Optical sources and detectors for fiber optical systems, integrated opto-electronics, GaAs charge coupled devices, solar cells, electroluminescent displays and ferroelectric and surface acoustic wave devices. Directed successful transfer of long wavelength laser technology to Rockwell Long Distance Telecommunications operating division.

 

1978-1980    Principal Scientist, Rockwell International - Responsible for technical leadership in department and initiating new technical efforts.  Senior corporate advisor for planning and evaluating all technical programs in III-V semiconductor devices.  Primary individual focus on application of MBE and MO-CVD to new heterostructure devices and initiated work on heterojunction bipolar transistors which have become major Rockwell product for Qualcom cellular telephones.

 

1972-1978    Manager Infrared Devices, Rockwell International - Responsible for leadership and technical direction of 15 technical people in development of III-V Compound Semiconductor Electro-Optical Devices.  Rockwell group became one of the leaders in III-V devices and included development of liquid phase epitaxy for long wavelength lasers, initiation of molecular beam epitaxial growth, development of high speed lasers and avalanche photodiodes, light emitting diodes, field assisted photo cathodes, solar cells and high speed charge coupled devices. Developed the highest efficiency GaAs concentrator solar cells and served as the Principal Investigator for delivery of a 20kW GaAs concentrator solar array to Sandia Labs for the Department of Energy.

 

1969-1972    Member of Technical Staff, Rockwell International - Responsible for individual contributions in development of liquid phase epitaxy and ion implantation in III-V compound materials and development of new devices.  Developed first successful n-type implantation for GaAs, first ion implanted MESFETs in semi-insulating GaAs and implant integration technology.

Consulting Experience:

Varian Associates, Avantek-HP, Intel, Vitesse Semiconductor, Matsushita Electronics, CBL, Sequoia Capital, U.S. Venture Partners, Novalux, Picarro, General Electric, Wecktech, Litton Systems, Raychem, Picogiga, Norton, Citicorp, U. S. Department of Justice, Morrison & Foerster, Berg, Ziegler, Anderson & Parker, Nortel, Hale & Dorr, Womble, Carlyle, Sandridge & Rice, Scientific Advisory Boards of Novalux, Cree, OEpic OptiComp, Lytek, Zia Laser and Semizone, Board of Directors Focaltron, EiC Corporation, OEpic and Solar Junction

 


Awards and Honors:

James and Ellenor Chesebrough Professor in the School of Engineering, Stanford University

IEEE Morris N. Liebmann Memorial Award, 2000

IEEE Third Millennium Medal, 2000

Fellow Optical Society of America, 2005

International Symposium on Compound Semiconductors Award and Heinrich Welker Medal, 2000

Alexander von Humboldt Foundation Senior Research Prize, 1998

Visiting Professor, Paul Drude Institute, Berlin, Germany, 1999

Visiting Professor and Research Fellow, Kochi University of Technology, Japan, 1999-2005

Best Paper Award, Solid State Devices and Materials Conference, Yokohama, Japan, 1996

Stanford Associates Alumni Award, 1994

Fellow, American Physical Society, 1992

Visiting Professor, Ecole Polytechnique Federale de Lausanne, Switzerland, 1992

Fellow, IEEE, 1988

Best Student Paper Award, Electronics Materials Conference, 1993, 1997, 2001, 2003, 2004

Best Student Paper Award, North American MBE Conference, 2001, 2003, 2004

Best Student Paper Award, Materials Research Society Conference, 2003, 2004, 2005

Electronic Materials Symposium Outstanding Student Award, 1988, 1990, 1993,1997, 2000, 2001, 2003, 2004, 2005

United Nations Visiting Professor, State University Sao Paulo, Campi–as, Brazil, 1978.

Tektronix Fellowship, Stanford University, 1965-66.

Terman Engineering Award, Stanford University, 1964.

Professional Societies and Activities:

Associate Editor, IEEE Journal of Lightwave Technology 2001-present

Divisional Editor, Journal of the Electrochemical Society 1976-1988

Organizing Committee, International GaAs and Related Compounds Conference 1976-present

Editorial Board, Solar Cells: Their Science, Technology, Applications and Economics 1979-87

Member, AdComm, IEEE-Electron Device Society 1980-1996

National Research Council Consultant 1980, 1985, 1987, 1988, 1990, 1992, 2000-2004

Chairman, Technical Committee on Optoelectronic Devices, IEEE Electron Society 1980-82

Chairman, Technical Committee on Materials-IEEE Electron Device Society 1982-1996

Organizing Committee, International and US Molecular Beam Epitaxy Conferences 1982-present

Chairman, International Molecular Beam Epitaxy Conference Advisory Committee, 1998-2004

Program Committee Chairman, 1987 Molecular Beam Epitaxy Workshop

Program Committee Chairman 1988 International GaAs and Related Compounds Conference

Conference Chairman 1993 Molecular Beam Epitaxy Workshop

Conference Chairman 2002 International Molecular Beam Epitaxy Conference

Program Committee Proceeding Editor, 1990 International Molecular Beam Epitaxy Conference

Program Committee IEDM, 1980-83

National Research Council Committee - Photovoltaic Devices for SPS, 1980-81; Challenges        in Compound Semiconductor Processing, 1987-88, Research Associates Program. 2000-04

Fellow, IEEE , American Physical Society and Optical Society of America

Member, Electrochemical Society, American Vacuum Society, Materials Research Society

Selected Member, Phi Beta Kappa, Tau Beta Pi and Sigma Xi

Current Research Activities

Research interests are in the area of new electronic and optoelectronic device structures created by heterojunctions, quantum wells, superlattices and engineered materials.  Molecular Beam Epitaxy (MBE) is utilized to prepare artificially structured metastable materials with atomic layer control and dimensions smaller than the wavelength of electrons.  In this regime, quantum size effects can be utilized to create entirely new device structures based upon tunneling and/or transitions between quantum states.  Current activities include: MBE growth of novel optoelectronic materials (GaInNAsSb) for long wavelength lasers; quantum well structures for surface emitting lasers, high-power lasers, high speed optical modulators and non-linear optical effects for generation, control and application of ultra-short optical pulses; Si based photonic devices; integrated photonic systems for biomedical detection and applications; high power THz sources and their application to medical imaging; spin based quantum structures for spintronics and quantum computation; quantum transport and single electron devices; micromachined structures (MEMS) for tunable optoelectronic devices.

Ph.D. Supervision:

Principal dissertation supervisor for 93 Ph.D. Students, 1982-present

Currently supervising 20 Ph.D. students.

Publications, Presentations and Patents

Over 850 publications in refereed scientific journals, 12 book chapters, editor of 3 books, holder of 18 issued US patents and over 700 presentations at technical meetings